Zhonghui Chen's Publications
Refereed journal papers:
- Surface Sciences (including epitaxial growth)
- Influence of Step-Induced Anti-phase Boundaries on the Surface Morphology of Zincblende-type Semiconductors, Z.H. Chen, M. Sokolowski, F. Stadler, M. Schneider, R. Fink, and E. Umbach, Europhys. Lett. 59, 552 (2002)
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- Photoemission Study of the Na/ZnSe(100) Interface, Z.H. Chen, D. Eich, G. Reuscher, A. Waag, R. Fink, and E. Umbach, Phys. Rev. B60, 8915 (1999)
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- Detailed investigation of CdS nanoparticle surfaces by high-resolution photoelectron spectroscopy, U. Winkler; D. Eich, Z.H. Chen, R. Fink, S.K. Kulkarni, E. Umbach, Chemical Physics Letters 306, 95 (1999)
- Band discontinuity and Band Gap of MBE Grown HgTe/CdTe(001) Hetero-interfaces Studied by k-Resolved Photoemission and Inverse Photoemission, D. Eich, K. Ortner, U. Groh, Z.H. Chen, C.R. Becker, G. Landwehr, R. Fink, and E. Umbach, Phys. Stat. Sol. (a)173, 261 (1999)
- Thermal behavior of CdS Nanoparticles Investigated by High resolution Photoelectron Spectroscopy, U. Winkler, D. Eich, Z.H. Chen, R. Fink, S.K. Kulkarni, and E. UmBach, Phys. Stat. Sol. (a)173, 253 (1999)
- Influence of Na and H2O on the Surface Properties of Cu(In,Ga)Se2 Thin Films, C. Heske, G. Richter, Z.H. Chen, R. Fink, E. Umbach, W. Riedl and F. Karg, J. Appl. Phys. 82, 2411 (1997)
- Structure Models of ZnSe(001)-c(2x2):Te Surfaces, Z.H. Chen, M. Sokolowski, F. Stadler, R. Fink, and E. Umbach, to be published
- Modification of Au/ZnSe(001) Interfaces with Submonolayer Na, Z.H. Chen, D. Eich, R. Fink, and E. Umbach, to be published
- The Atomic-Scale Structural and Electronic Properties of the Te/ZnSe(001) Interface at Initial Growth Stages, Z.H. Chen, M. Sokolowski, F. Stadler, R. Fink, and E. Umbach, to be published
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- Semiconductor Nanostructure Materials and Devices
- Noise and photoconductive gain in InAs quantum dot infrared photodetectors, Zhengmao Ye, Joe C. Campbell, Zhonghui Chen, Eui-Tae Kim, and Anupam Madhukar, Appl. Phys. Lett. 83, 1234 (2003).
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- InAs Quantum Dot Infrared Photodetectors with In0.15Ga0.85As Strain Relief Cap Layers, Z. Ye and J. C. Campbell, Z.H. Chen, E. T. Kim, and A. Madhukar, J. Appl. Phys. 92, 7462 (2002)
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- Selective Manipulation of InAs Quantum Dot Electronic States Using a Lateral Potential Confinement Layer, E.T. Kim, Z.H. Chen, and A. Madhukar, Appl. Phys. Lett. 81, 3473 (2002)
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- Voltage-controllable Multi-Wavelength InAs Quantum-Dot Infrared Photodetectors for Mid- and Far-infrared Detection, Z. Ye and J. C. Campbell, Z.H. Chen, E. T. Kim, and A. Madhukar, J. Appl. Phys. 92, 4141 (2002)
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- Normal-Incidence InAs Self-Assembled Quantum-Dot Infrared Photodetectors With A High Detectivity, Z. Ye and J. C. Campbell, Z.H. Chen, E. T. Kim, and A. Madhukar, IEEE J. of Quantum Electronics 38, 1234 (2002)
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- Intraband and Interband Photocurrent Spectroscopy of InAs/GaAs(001) Quantum Dots in n-i(QDs)-n Photodetector Structures, Z.H. Chen, E.T. Kim, and A. Madhukar, J. Vac. Sci. Technol. B20, 1243 (2002)
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- Tuning Mid- and Long-Wavelength InAs Quantum-Dot Infrared Photodetectors Using InxGa1-xAs Capping Layers, E.T. Kim, Z.H. Chen, and A. Madhukar, J. Vac. Sci. Technol. B20, 1188 (2002)
- Quantum dot infrared photodetectors, Zhengmao Ye, J. C. Campbell, Zhonghui Chen, E. T. Kim, and A. Madhukar, Proc. SPIE 4656, 16-24 (2002)
- Intraband-Transition-Induced Dipoles in Self-Assembled InAs/GaAs(001) Quantum Dots, Z.H. Chen, E.T. Kim, and A. Madhukar, Appl. Phys. Lett. 80, 2770 (2002)
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- Normal-Incidence Voltage Tunable Middle and Long Wavelength Infrared Photoresponse in Self-Assembled InAs Quantum Dots, Z.H. Chen, E.T. Kim, and A. Madhukar, Appl. Phys. Lett. 80, 2490 (2002)
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- High Performance InAs/GaAs Quantum Dots Infrared Photodetector with/without Al0.20Ga0.80As Blocking Layers, Z. Ye, J. Campbell, Z.H. Chen, O. Baklenov, E.T. Kim, I. Mukhametzhanov, J. Tie, and A. Madhukar, MRS (Material Research Society) Symposium Proceeding, Vol.692, H9.17.1 (2002)
- Tailoring Detection Bands of InAs Quantum-Dot Infrared Photodetectors Using InxGa1-xAs Strain-Relieving Quantum Wells, E.T. Kim, Z.H. Chen, and A. Madhukar, Appl. Phys. Lett. 79, 3341 (2001)
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- Normal Incidence InAs/AlGaAs Quantum Dot Infrared Photodetectors with Undoped Active Region, Z.H. Chen, O. Baklenov, E.T. Kim, I. Mukhametzhanov, J. Tie, A. Madhukar, Z.Ye, and J. Campbell, J. Appl. Phys. 89, 4558 (2001)
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- InAs/AlxGa1-x As Quantum Dot Infrared Photodetectors with Undoped Active RegionZ.H. Chen, O. Baklenov, E.T. Kim, I. Mukhametzhanov, A. Madhukar, Z.Ye, F. Ma, B. Yang, and J. Campbell, , Infrared Physics & Technology 42, 479 (2001)
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- Optical and Photocurrent Spectroscopy Studies of Inter- and Intra-Band Transitions in Size-Tailored InAs/GaAs Quantum Dots,I. Mukhametzhanov, Z.H. Chen, O. Baklenov, E.T. Kim, and A. Madhukar, Phys. Stat. Sol. (b) 224, 697 (2001)
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- Detailed investigation of CdS nanoparticle surfaces by high-resolution photoelectron spectroscopy, U. Winkler; D. Eich, Z.H. Chen, R. Fink, S.K. Kulkarni, E. Umbach, Chemical Physics Letters 306, 95 (1999)
- Thermal behavior of CdS Nanoparticles Investigated by High resolution Photoelectron Spectroscopy, U. Winkler, D. Eich, Z.H. Chen, R. Fink, S.K. Kulkarni, and E. UmBach, Phys. Stat. Sol. (a)173, 253 (1999)
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- Optical Spectroscopy of Semiconductors
- Selective Manipulation of InAs Quantum Dot Electronic States Using a Lateral Potential Confinement Layer, E.T. Kim, Z.H. Chen, and A. Madhukar, Appl. Phys. Lett. 81, 3473 (2002)
- Intraband and Interband Photocurrent Spectroscopy of InAs/GaAs(001) Quantum Dots in n-i(QDs)-n Photodetector Structures, Z.H. Chen, E.T. Kim, and A. Madhukar, J. Vac. Sci. Technol. B20, 1243 (2002)
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- Tuning Mid- and Long-Wavelength InAs Quantum-Dot Infrared Photodetectors Using InxGa1-xAs Capping Layers, E.T. Kim, Z.H. Chen, and A. Madhukar, J. Vac. Sci. Technol. B20, 1188 (2002)
- Intraband-Transition-Induced Dipoles in Self-Assembled InAs/GaAs(001) Quantum Dots, Z.H. Chen, E.T. Kim, and A. Madhukar, Appl. Phys. Lett. 80, 2770 (2002)
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- Normal-Incidence Voltage Tunable Middle and Long Wavelength Infrared Photoresponse in Self-Assembled InAs Quantum Dots, Z.H. Chen, E.T. Kim, and A. Madhukar, Appl. Phys. Lett. 80, 2490 (2002)
- Tailoring Detection Bands of InAs Quantum-Dot Infrared Photodetectors Using InxGa1-xAs Strain-Relieving Quantum Wells, E.T. Kim, Z.H. Chen, and A. Madhukar, Appl. Phys. Lett. 79, 3341 (2001)
- Normal Incidence InAs/AlGaAs Quantum Dot Infrared Photodetectors with Undoped Active Region, Z.H. Chen, O. Baklenov, E.T. Kim, I. Mukhametzhanov, J. Tie, A. Madhukar, Z.Ye, and J. Campbell, J. Appl. Phys. 89, 4558 (2001)
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- InAs/AlxGa1-x As Quantum Dot Infrared Photodetectors with Undoped Active RegionZ.H. Chen, O. Baklenov, E.T. Kim, I. Mukhametzhanov, A. Madhukar, Z.Ye, F. Ma, B. Yang, and J. Campbell, , Infrared Physics & Technology 42, 479 (2001)
- Optical and Photocurrent Spectroscopy Studies of Inter- and Intra-Band Transitions in Size-Tailored InAs/GaAs Quantum Dots,I. Mukhametzhanov, Z.H. Chen, O. Baklenov, E.T. Kim, and A. Madhukar, Phys. Stat. Sol. (b) 224, 697 (2001)
- Metastable States and Their Resonant Electron-Phonon Interaction of Shallow Donors in GaAs and InP, S.C. Shen, Zhanghai Chen, and Z.H. Chen, IPAP (the Institute of Pure and Applied Physics) Conference Series 2, 89 (2001).
- Photothermal Ionization Spectroscopy of Shallow Nitrogen Donor States in 4H-SiC, C.Q. Chen, J. Zeman, F. Engelbrecht, C. Peppermueller, R. Helbig, Z.H. Chen, and G. Martinez, J. Appl. Phys. 87, 3800 (2000)
- Reply to a Comment on Magnetospectroscopy of bound phonons in high purity GaAs, Z.H. Chen, P.L. Liu, and S.C. Shen, Phys. Rev. Lett. 81, 2835(1998)
- Monte Carlo Simulation for Photoconductivity Response of LO Phonon in Shallow Donor Doped Semiconductors, Zhanghai Chen, Z.H. Chen, Pulin Liu, Xiaohong Shi, Guoliang Shi, Canming Hu, and S. C. Shen, Chinese J. of Semiconductors 19, 447 (1998).
- High-lying Metastable States of Si Donors in GaAs under Magnetic Field,Zhanghai Chen, Z.H. Chen, P.L. Liu, G.L. Shi, C.M. Hu, X.H. Shi, and S.C. Shen, J. Appl. Phys. 81, 6183(1997)
- High-Index Metastable States of Si Donors in GaAs under Magnetic Field, Zhanghai Chen, Z.H. Chen, Pulin Liu, Guoliang Shi, Canming Hu, Xiaohong Shi, and S.C. Shen, Chinese J. of Semiconductors 18, 806 (1997)
- Resonant Polaron Effects Involved with High-Excited Donor States in GaAs, Zhanghai Chen, Z.H. Chen, Pulin Liu, Xiaohong Shi, Guoliang Shi, and S.C. Shen, ACTA PHYSICA SINICA (in Chinese) 46, 557 (1997)
- Magnetospectroscopy of Bound Phonons in High Purity GaAs, Z.H. Chen, Pulin Liu, Wei Lu, Zhanghai Chen, Xiaohong Shi, Guoliang Shi, S.C. Shen, Bin Yang, Zhanguo Wang, and Lanying Lin, Phys. Rev. Lett. 79, 1078 (1997)
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- Photoconductivity Spectra for Boron Acceptors in Si1-xGex Alloys, X.H. Shi, P.L. Liu, Z.H. Chen, S.C. Shen, and J. Schilz, Appl. Phys. Lett. 68, 211 (1996)
- A New-type of Organic Magnetooptical Material and Device, R.K. Yuan, W. Wu, Y.B. Wang, H. Qin, G.Q. Wang, Z.H. Chen, and S.C. Shen, Synthetic Metals 69, 275 (1995)
- Nonlinear Current-Voltage Characteristic of High Purity GaAs, Z.H. Chen, Pulin Liu, Guoliang Shi, Wei Lu, and S.C. Shen, Chinese J. of Semiconductors 16, 371 (1995)
- Far Infrared Photoconductivity Mechanism of Shallow Impurity in GaAs, Z.H. Chen, Pulin Liu, Tao Zhou, Guoliang Shi, Wei Lu, Xingliang Huang, and S.C. Shen, ACTA PHYSICA SINICA (Overseas Edition) 6, 453 (1994)
- Organic Materials
- A New-type of Organic Magnetooptical Material and Device, R.K. Yuan, W. Wu, Y.B. Wang, H. Qin, G.Q. Wang, Z.H. Chen, and S.C. Shen, Synthetic Metals 69, 275 (1995)
- Y.B. Wang, R.K. Yuan, H. Yuan, Z.H. Chen, Theoretical and Experimental Studies of Conducting Polymer Polyaniline Electrolyte Interface by Impedance Spectroscopy, Synthetic Metals 55, 1501 (1993)
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Conference
(Invited and Contributed)
- Invited Presentations
- The Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics, Zhonghui Chen, E. T. Kim, Zhengmao Ye, J. C. Campbell, and A. Madhukar, Novel Infrared Detectors Based on Semiconductor Quantum Dots, Karlsruhe, Germany, Sept. 27-Oct. 1, 2004.
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- The 30th International Symposium on Compound Semiconductor, Zhengmao Ye, J. C. Campbell, Zhonghui Chen, E. T. Kim, and A. Madhukar, Quantum dot infrared photodetectors, San Diego, CA, August 25-27, 2003.
- MRS (Materials Research Society) Fall Meeting, J. C. Campbell, Z. Ye and, Z.H. Chen, E. T. Kim, and A. Madhukar, Quantum Dot Infrared Photodetectors, 2002 Boston, Massachusetts, Dec. 2-6, 2002.
- The 15th Annual Meeting of the IEEE Lasers & Electro-Optics Society (LEOS), LEOS2002, Zhonghui Chen, Zhengmao Ye, E. T. Kim, J. C. Campbell, and A. Madhukar, Quantum Dot Infrared Photodetectors, Glasgow, Scotland, Nov. 10-14, 2002.
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- Electronic Materials Conf. 2002, J. C. Campbell, Z. Ye, Z.H. Chen, E. T. Kim, and A. Madhukar, “Quantum dots infrared photodetectors,Santa Barbara, CA, June 26-28, 2002.
- Photonic West 2002 Conference, (Symposium: Optoelectronics - Integrated Optoelectronic Devices; Program: Nanotechnologies in Photonics-Quantum Dot Devices and Computing)Z. Ye, J. C. Campbell, Z.H. Chen, E. T. Kim, and A. Madhukar, Quantum Dot Infrared Photodetector, , San Jose, CA, Jan. 19-25, 2002.
- The 10th International Conference on Narrow Gap Semiconductors and Related Small Energy Phenomena, Physics and Applications (NGS 10) (Session: Physics under high magnetic field), S.C. Shen, Zhanghai Chen, and Z.H. Chen, Metastable States and Their Resonant Electron-Phonon Interaction of Shallow Donors in GaAs and InP, Ishikawa, Japan, May 28-31,2001.
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- Contributed Presentations
- Z.H. Chen, E. T. Kim, and A. Madhukar, Temperature-Dependent Orientation of Intraband Dipoles of Self-Assembled InAs/GaAs Quantum Dot Ensembles, 30th International Symposium on Compound Semiconductor, August 25-27, 2003, San Diego, CA
- E.T. Kim, M. Ho, Z.H. Chen, Z. Ye, J.C. Campbell, and A. Madhukar, Effect of InAlGaAs Lateral Potential Confinement Layer on InAs Quantum Dot Infrared Photodetector, the 45th 2001 Electronic Materials Conference, Salt Lake City, Utah, June 25-27, 2003.
- Z.H. Chen, E. T. Kim, and A. Madhukar, Temperature Dependence of Intraband dipoles of InAs/GaAs Quantum Dot Ensembles, 2002 MRS (Materials Research Society) Fall Meeting, Boston, Massachusetts, Dec. 2-6, 2002.
- E.T. Kim, Z.H. Chen, and A. Madhukar, Selective Manipulation of Self-Assembled Quantum Dot Electronic Sates via Use of a Lateral Potential Confinement Layer, 12th International Conference on Molecular Beam Epitaxy, San Francisco, CA, Sept 15-20, 2002
- Z.H. Chen, Z. Ye, E.T. Kim, M. Ho, J.C. Campbell, and A. Madhukar, Normal-Incidence Single and Dual Wavelength Infrared Photodetectors Based on Epitaxical Semiconductor Quantum Dots, 5th International Conference on Mid-Infrared Optoelectronics Materials and Devices, Annapolis, Maryland, Sept. 8-11, 2002.
- Z.H. Chen, E.T. Kim, M. Ho, A. Madhukar, Z. Ye, and J.C. Campbell, InGaAs Capped GaAs(001)/InAs Quantum Dot Infrared Photodetectors with Undoped Active Region, 2002 MRS (Materials Research Society) Spring Meeting, San Francisco, CA, April 1-5, 2002.
- Z. Ye, J.C. Campbell, Z.H. Chen, O. Baklenov, E.T. Kim, I. Mukhametzhanov, J. Tie, and A. Madhukar, High Performance InAs/GaAs Quantum Dots Infrared Photodetector with/without Al0.20Ga0.80As Blocking Layers, 2001 MRS (Materials Research Society) Fall Meeting, Boston, MA, Nov. 26-30, 2001.
- Z. Ye, J.C. Campbell, Z.H. Chen, E.T. Kim, I. Mukhametzhanov, J. Tie, and A. Madhukar, Bias -Dependent Dual-Spetral InAs/In0.15Ga0.85As Quantum Dots Infrared Photodetectors, The 14th Annual Meeting of the IEEE Lasers & Electro-Optics Society (LEOS), San Diego, Nov. 11-15, 2001.
- Z.H. Chen, E.T. Kim, A. Madhukar, Late News, Intraband and Interband Dipole-Moments of InAs/GaAs(001) Quantum Dots, Late News of the 20th North American Conference on Molecular Beam Epitaxy, Providence, Rhode Island, Oct. 1-3, 2001.
- E.T. Kim Z.H. Chen, M. Ho, K. Zhang, A. Madhukar, Tuning of Mid and Long Wavelength InAs Quantum-Dot Infrared Photodetectors Using InAlGaAs Barrier Layers, the 20th North American Conference on Molecular Beam Epitaxy, Providence, Rhode Island, Oct. 1-3, 2001.
- Z.H. Chen, E.T. Kim, I. Mukhametzhanov, J. Tie, A. Madhukar, Z. Ye, and J.C. Campbell, Normal Incidence InAs/InAlGaAs Quantum Dot Infrared Photodetectors with Undoped Active Region, the 43th 2001 Electronic Materials Conference, Notre Dame, Indiana, June 27-29, 2001.
- E.T. Kim, Z.H. Chen, and A. Madhukar, Tuning InAs/InAlGaAs Quantum Dot Structures for Infrared Photodetectors, the 43th 2001 Electronic Materials Conference, Notre Dame, Indiana, June 27-29, 2001.
- Z.H. Chen, O. Baklenov, E.T. Kim, I. Mukhametzhanov, A. Madhukar, Z.Ye, F. Ma, B. Yang, and J.C. Campbell, Growth and Characterization of Size-tailored InAs/AlGaAs Quantum Dots for Intraband Infrared Photodetectors, Late News of the 19th North American Conference on Molecular Beam Epitaxy, Tempe, Arizona, October 15-18, 2000.
- I. Mukhametzhanov, Z.H. Chen, O. Baklenov, E.T. Kim, A. Madhukar, Optical and Photocurrent Spectroscopic Studies of Inter- and Intra-band Transitions in Size-Tailored InAs/GaAs Quantum dots, International Conference on Semiconductor Quantum Dots, Munich, Germany, July 31- August 3, 2000
- Z.H. Chen, O. Baklenov, E.T. Kim, I. Mukhametzhanov, A. Madhukar, Z.Ye, F. Ma, B. Yang, and J.C. Campbell, InAs/AlxGa1-x As Quantum Dot Infrared Photodetectors with Undoped Active Region, Quantum Well Infrared Photodetector (QWIP) 2000 Workshop, Dana Point, CA, July 27-29, 2000.
- O. Baklenov, Z.H. Chen, E.T. Kim, I. Mukhametzhanov, A. Madhukar, F. Ma, Z. Ye, B. Yang, and J. Campbell, Dark Current Reduction and Operational Wavelength Shift in Normal Incidence InAs/GaAs QDIPs Through the Introduction of AlGaAs Layers in the Active Region of the Detector, oral presentation of the 58th Annual IEEE Device Research Conference (DRC), Denver, Colorado, June-19-21,2000
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- Z.H. Chen, D. Eich, R. Fink, and E. Umbach, Preparation and Characterization of ZnSe(100) MBE Single Crystal Substrates, 14th International Vacuum Congress & 10th International Conference on Solid Surfaces, Birmingham, UK, August 31 - September 4,1998
- Z.H. Chen, D. Eich, G. Reuscher, R. Fink, and E. Umbach, Photoemission Studies on Na/ZnSe(100) Interfaces, German Physical Society Spring Meeting 1998 (DPG Frühjahrstagung), Regensburg, Germany, March 23-27,1998
- S.C. Shen, Zhanghai Chen, and Z.H. Chen, Metastable States and Their Resonant Electron-Phonon Interaction of Shallow Donors in GaAs and InP, International Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, Australia, 1998.
- C. Heske, G. Richter, Z.H. Chen, R. Fink, E. Umbach, W. Riedl and F. Karg, Influence of Humidity on Polycrystalline Cu(In,Ga)Se2 Thin Films for Solar Cells: a Study of Na and H2O Coadsorption, 25th IEEE Photovoltaic Specialists Conference, Washington, D.C., p861, 1996
- Z.H. Chen, S.C. Shen, Far-Infrared Photoconductivity Spectroscopy of GaAs Thin Film at Electric Fields, Solid State Commu., vol.93(5), p454(1995), 6th International Conference on Shallow Level Centers in Semiconductors, Berkeley, CA, August,1994
- R.K. Yuan, W. Wu, Y.B. Wang, H. Qin, G.Q. Wang, Z.H. Chen, and S.C. Shen, A New-type of Organic Magnetooptical Material and Device, The International Conference on Science and Technology of Synthetic Metals (ICSM'94), Seoul, Korea, July 24-29, 1994
- Z.H. Chen, R.K. Yuan, S.C, Shen, Y.B. Wang, Fractal Interface Characteristics of Polyaniline Film, The 2nd International Conference on Thin Film Physics and Applications, Shanghai, p123, 1994
- R.K. Yuan, W. Wu, Y.B. Wang, G.Q. Wang, H. Qin, Z.H. Chen, and S.C. Shen, Faraday Magneto-optical Effect of Polyaniline, The 4th China-Japan Joint Symposium on Conduction and Photo-Conduction in Organic Solids and Related Phenomena, Okazaki, Japan, p37, 1992
- Y.B. Wang, R.K. Yuan, H. Yuan, Z.H. Chen, Theoretical and Experimental Studies of Conducting Polymer Polyaniline Electrolyte Interface by Impedance Spectroscopy, The International Conference on Science and Technology of Synthetic Metals (ICSM'92), Goeteborg, Sweden, August 12-18, 1992
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Seminars
- Z.H. Chen, Self-Assembled Semiconductor Quantum Dots and Their Optoelectronic Applications, Department of Chemistry and Biochemistry, Queens College, Flushing, New York, Nov. 19, 2003.
- Z.H. Chen, Self-Assembled Semiconductor Quantum Dots and Their Optoelectronic Applications, Photonic Initiative Symposium, Graduate Center, The City University of New York, New York, Nov. 13, 2003.
- Z.H. Chen, Self-Assembled Semiconductor Nanostructures and their Optoelectronic Applications, Physics Department, Brooklyn College, City University of New York, New York, March 27, 2003
- Z.H. Chen, Self-Assembled III-V Semiconductor Quantum Dots for Optoelectronic Applications, Department of Materials Science and Engineering, University of Southern California, Los Angeles, CA, Sept. 28, 2001.
- Z.H. Chen with J.C. Campbell, Y.C. Chang, A. Madhukar, D. Rich, and W.I. Wang, Stress-Engineered Quantum Dots for Multi-Spectral IR Detector Arrays, Progress in Semiconductor Detectors Conference, Williamsburg, VA, June 4-5, 2001.
- Z.H. Chen, Normal Incidence InAs/AlGaAs Quantum Dot Infrared Photodetectors, Agere Systems Inc. (Ortel Division), Alhambra, CA, June 21, 2001.
- Z.H. Chen, InAs/AlGaAs Quantum Dot Infrared Photodetectors, JDS Uniphase Corp. (SDL Division), San Jose, CA, Nov. 30, 2000.
- Z. H Chen, Quantum Dot Infrared Photodetectors, AXT Inc., Monterey Park, CA, 2000
- Z. H Chen, Normal Incidence InAs/AlGaAs Quantum Dot Infrared Photodetectors, Gtran Inc., Newbury Park, CA, Dec. 2000
- Z. H Chen, InAs/AlGaAs Quantum Dot Infrared Photodetectors, Tecstar (Now part of Emcore Corp.), City of Industry, CA, August 2000
- Z.H. Chen, Structural and Electronic Properties of ZnSe(001) Surfaces and Interfaces, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China, Jan. 5, 1999.
- Z.H. Chen, Photoemission and Spot-Profile-Analysis Low-Energy-Electron-Diffraction (SPA-LEED) of ZnSe(001) Surfaces, Experimental Physics II, Universitaet Wuerzburg, Wuerzburg, Bavaria, Germany, Nov. 3, 1998.
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Zhonghui Chen