References
1. A. Franciosi and C.G. Van de Walle, Heterojunction band offset engineering, Surf. Sci.
Rep. 25, 1-40 (1996).
2. R.T. Tung, Recent
advances in Schottky barrier concepts, Mat. Sci. Eng. R
35, 1 (2001).
3. H. Ishii, K. Sugiyama, E. Ito, and K. Seki, Energy level alignment and interfacial
electronic structures at organic/metal and organic/organic interfaces, Adv.
Mater. 11, 605-625 (1999).
4. D. Cahen and A. Kahn, Electron
energetics at surfaces and interfaces: concepts and experiments, Adv.
Mater. 15, 271-277 (2003).
5. J. Tersoff, Schottky
barrier heights and the continuum of gap states, Phys. Rev. Lett. 52, 465-8 (1984).
6. R.T. Tung, Chemical
bonding and Fermi level pinning at metal-semiconductor interfaces, Phys.
Rev. Lett. 84, 6078-81 (2000).
7. R.T. Tung, Formation
of an electric dipole at metal-semiconductor interfaces, Phy. Rev. B 64, 205310 (2001).
8. M.O. Aboelfotoh, C. Fröjdh, and C.S. Petersson, Schottky-barrier behavior of metals on n-
and p-type 6H-SiC, Phys. Rev. B 67, 075312 (2003).
9. R.A. McKee, F.J. Walker, M. Buongiorno Nardelli, W.A.
Shelton, and G.M. Stocks, The Interface Phase and the Schottky Barrier
for a Crystalline Dielectric on Silicon, Science 300, 1726-1730
(2003).
10. J.L. Freeouf, Are interface
states consistent with Schottky barrier measurements?, Appl. Phys. Lett. 41, 285 (1982).
11. R.T. Tung, Schottky
barrier height-do we really understand what we measure?, J. Vac. Sci. Technol. B 11,
1546-52 (1993).
12. R.T. Tung, Schottky-barrier
formation at single-crystal metal-semiconductor interfaces, Phys. Rev.
Lett. 52, 461-4 (1984).
13. Y.F. Dong, S.J. Wang, J.W. Chai, Y.P. Feng, and A.C.H. Huan, Impact of interface structure on
Schottky-barrier height for Ni/ZrO[sub 2](001) interfaces, Appl. Phys.
Lett. 86, 132103-3 (2005).
14. Z.Q. Shi and W.A. Anderson, Cryogenic Processing of Metal/Gaas Schottky
Diodes, Solid-State Electron. 35, 1427-1432 (1992).
15. H. Hasegawa, T. Sato, and T. Hashizume, Evolution mechanism of nearly pinning-free platinum/n-type indium
phosphide interface with a high Schottky barrier height by in situ
electrochemical process, J. Vac. Sci. Technol. B 15, 1227-1235
(1997).
16. Z.Q. Shi and W.A. Anderson, Current transport in Pd/n-InP diodes formed at room and low temperature,
J. Appl. Phys. 72, 3803-7 (1992).
17. H.J. Lee, W.A. Anderson, H. Hardtdegen, and H. Luth, Barrier Height Enhancement of Schottky
Diodes on N- In0.53ga0.47as by Cryogenic Processing, Appl. Phys. Lett. 63, 1939-1941 (1993).
18. A. Wang and W.A. Anderson, Metal-semiconductor contacts to n-ZnS0.07Se0.93, J. Electron. Mater. 25, 201-205 (1996).
19. S.A. Clark, S.P. Wilks, A. Kestle, D.I. Westwood, and M.
Elliott, Improvements to the Schottky
barrier heights of intimate metal- InGaAs contacts by low temperature
metallisation, Surf. Sci. 352, 850-854 (1996).
20. H.-T. Wang, B.S. Kang, F. Ren, A. Herrero, A.M. Gerger, B.P.
Gila, S.J. Pearton, H. Shen, J.R. LaRoche, and K.V. Smith, Thermal stability of Au schottky diodes on GaAs deposited at either 77
or 300 K, J. Electrochem. Soc. 153, G787-G790
(2006).
21. A.M. Herrero, A.M. Gerger, B.P. Gila,
S.J. Pearton, H.-T. Wang, S. Jang, T. Anderson, J.J. Chen, B.S. Kang, and F. Ren, Interfacial differences in enhanced schottky
barrier height Au/n-GaAs diodes deposited at 77 K, Appl. Surf. Sci. In Press, Corrected Proof, (2006).
22. J.R. Waldrop, Direct
variation of metal-GaAs Schottky barrier height by the influence of interface
S, Se, and Te, Appl. Phys. Lett. 47, 1301-3
(1985).
23. S. Hohenecker, T.U. Kampen, W. Braun, and D.R.T. Zahn, Influence of sulfur on the Sb-GaAs(001) interface, Surf. Sci. 433-435,
347-51 (1999).
24. S. Meskinis, K. Slapikas, V. Grigaliunas, J. Matukas, and S.
Smetona, The influence of annealing on
current-voltage characteristics of H/sub 2/SeO/sub 3/ treated Al-nGaAs Schottky
contact, Phys. Stat. Sol. A 180, 499-505 (2000).
25. J. Her, H. Lim, C.H. Kim, I.K. Han, J.I. Lee, and K.N. Kang, Effects of sulfur treatments on metal-InP
Schottky contact and Si/sub 3/N/sub 4/-InP interfaces, J. Korean Inst. Tel.
Elec. 31A, 56-63 (1994).
26. S.-H. Kim, T.-Y. Seong,
and H.-K. Kim, Electrical characteristics
of Pt Schottky contacts on sulfide-treated n -type ZnO, Appl. Phys. Lett. 86, 022101-1 (2005).
27. K. Ikeda, Y. Yamashita, N. Sugiyama, N.
Taoka, and S.-i. Takagi, Modulation of NiGe/Ge
Schottky barrier height by sulfur segregation during Ni germanidation,
Appl. Phys. Lett. 88, 152115 (2006).
28. Q.T. Zhao, U. Breuer, E. Rije, S. Lenk, and S. Mantl, Tuning of NiSi/Si Schottky barrier heights
by sulfur segregation during Ni silicidation, Appl. Phys. Lett. 86, 062108-3 (2005).
29. M. Tao, D. Udeshi, N. Basit, E.
Maldonado, and W.P. Kirk, Removal of
dangling bonds and surface states on silicon (001) with a monolayer of selenium,
Appl. Phys. Lett. 82, 1559-1561 (2003).
30. M. Yamada, A.K. Wahi, T. Kendelewicz, and W.E. Spicer, Fermi-level pinning on ideally terminated
InP(110) surfaces, Phys. Rev. B 45, 3600-5 (1992).
31. H. Nobusawa and H. Ikoma, Antimony
passivation of InP, Jpan. J.
Appl. Phys. Part 1 32, 3713-19 (1993).
32. Y. Sakamoto, T. Sugino, T. Miyazaki, and J. Shirafuji, Enhancement of barrier height of Au/PN/sub
x//InP Schottky diodes by in situ surface treatment,
Electron. Lett. 31, 1104-5
(1995).
33. D.T. Quan and H. Hbib, High
barrier height Au/n-type InP Schottky contacts with a
PO/sub x/N/sub y/H/sub z/ interfacial layer, Solid-St. Electron. 36, 339-44 (1993).
34. H. Sawatari and O. Oda, Schottky
diodes on n-type InP with CdOx interfacial layers grown by the absorption and
oxidation method, J. Appl. Phys. 72, 5004-6 (1992).
35. K. Hattori and Y. Torii, A
new method to fabricate Au/n-type InP Schottky
contacts with an interfacial layer, Solid-St. Electron. 34,
527-31 (1991).
36. F. Hasegawa, M. Onomura, C. Mogi, and Y. Nannichi, Reduction of Schottky barrier heights by
surface oxidation of GaAs and its influence on DLTS signals for the midgap
level EL2, Solid-St. Electron. 31, 223-8 (1988).
37. J. Nakamura, H. Niu, and S. Kishino, Barrier height of InP Schottky diodes prepared by means of UV oxidation,
Jpn. J. Appl. Phys. Part 1 32, 699-703 (1993).
38. H. Hasegawa, H. Ishii, and K. Koyanagi, Formation mechanism of Schottky barriers on MBE-grown GaAs surfaces
subjected to various treatments, Appl. Surf. Sci. 56-58,
317-24 (1992).
39. J.C. Costa, T.J. Miller, F. Williamson, and M.I. Nathan, Unpinned GaAs Schottky barriers with an epitaxial silicon layer, J. Appl. Phys. 70,
2173-84 (1991).
40. M. Cantile, L. Sorba, S. Yildirim, P. Faraci, G. Biasiol, A.
Franciosi, T.J. Miller, and M.I. Nathan, Silicon-induced
local interface dipole in Al/GaAs(001) Schottky diodes,
Appl. Phys. Lett. 64, 988-90 (1994).
41. C. Berthod, N. Binggeli, and A. Baldereschi, Schottky barrier tuning with heterovalent
interlayers: Al/Ge/GaAs versus Al/Si/GaAs, J. Vac. Sci. Technol. B 18,
2114-18 (2000).
42. J. Ivanco, H. Kobayashi, J. Almeida, and G. Margaritondo, Unpinning of the Au/GaAs interfacial Fermi
level by means of ultrathin undoped silicon interlayer inclusion, J. Appl. Phys.
87, 795-800 (2000).
43. C. Marinelli, L. Sorba, M. Lazzarino, D.
Kumar, E. Pelucchi, B.H. Muller, D. Orani, S. Rubini, A. Franciosi, S. De
Franceshi, and F. Beltran, Tunable
Schottky barrier contacts to InxGa1-xAs, J. Vac. Sci. Technol. B 18,
2119-2127 (2000).
44. I.H. Campbell, S. Rubin, T.A. Zawodzinski, J.D. Kress, R.L.
Martin, D.L. Smith, N.N. Baraskkov, and J.P. Ferraris, Controlling Schottky energy barriers in organic electronic devices
using self-assembled monolayers, Phys. Rev. B 54, R14321-4 (1996).
45. L. Zuppiroli, L. Si-Ahmed, K. Kamaras, F. Nuesch, M.N.
Bussac, D. Ades, A. Siove, E. Moons, and M. Gratzel, Self-assembled monolayers as interfaces for organic opto-electronic
devices, Euro. Phys. J. B 11, 505-12 (1999).
46. Y. Selzer and D. Cahen, Fine
tuning of Au/SiO2/Si diodes by varying interfacial dipoles using molecular
monolayers, Adv. Mater. 13, 508-+ (2001).
47. J.W.P. Hsu, Y.L. Loo, D.V. Lang, and J.A. Rogers, Nature of electrical contacts in a
metal–molecule–semiconductor system, J. Vac. Sci. Technol. B 21,
1928-1935 (2003).
48. T. Kampen, A. Bekkali, I. Thurzo, D.R.T. Zahn, A. Bolognesi,
T. Ziller, A. Di Carlo, P. Lugli, and T. Kampen, Barrier heights of organic modified Schottky contacts: Theory and
experiment, Appl. Surf. Sci. 234, 313-320 (2004).
49. W. Wang, T. Lee, and M.A. Reed, Mechanism of electron conduction in self-assembled alkanethiol
monolayer devices, Phys. Rev. B 68, 035416 (2003).
50. S. Lodha, P. Carpenter, and D.B. Janes, Effect of contact properties on current transport in
metal/molecule/GaAs devices, J. Appl. Phys. 99, 024510-9 (2006).
51. A. Vilan, A. Shanzer, and D. Cahen, Molecular control over Au/GaAs diodes,
Nature 404, 166-8 (2000).
52. H. Haick, M. Ambrico, T. Ligonzo, R.T.
Tung, and D. Cahen, Controlling
semiconductor/metal junction barriers by incomplete, nonideal molecular
monolayers, J. Am. Chem. Soc. 128, 6854-6869 (2006).
53. J.E. Pattison, M.F. Daniel, D.A. Anderson, P.R. Tapster, N.
Apsley, and M.J. Slater, A 0.85 eV
Au-Langmuir film-InP Schottky barrier, Ext. Abs. ESSDERC 64-5 (1981).
54. R.H. Tredgold and Z.I. El-Badawy, Increase of Schottky barrier height at GaAs surfaces by carboxylic acid
monolayers and multilayers, J. Phys. D 18, 103-9 (1985).
55. A. Natan, Y. Zidon, Y. Shapira, and L. Kronik, Cooperative effects and dipole formation at
semiconductor and self-assembled-monolayer interfaces, Phys. Rev. B 73,
193310-4 (2006).
56. L.S. Yu, D. Qiao, L. Jia, S.S. Lau, Y. Qi, and K.M. Lau, Study of Schottky barrier of Ni on p-GaN,
Appl. Phys. Lett. 79, 4536-4538 (2001).
57. P.J. Hartlieb, A. Roskowski, R.F. Davis, W. Platow, and R.J.
Nemanich, Pd growth and subsequent
Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces,
J. Appl. Phys. 91, 732-738 (2002).
58. Y.-J. Lin, Application
of the thermionic field emission model in the study of a Schottky barrier of Ni
on p-GaN from current--voltage measurements, Appl. Phys. Lett. 86, 122109-3 (2005).
59. D.C. Look and B. Claflin, P-type
doping and devices based on ZnO, physica status solidi (b) 241,
624-630 (2004).
60. M. Kurimoto, A.B.M.A. Ashrafi, M.
Ebihara, K. Uesugi, H. Kumano, and I. Suemune, Formation of ohmic contacts to p-type ZnO, physica status solidi
(b) 241, 635-639 (2004).
61. U. Ozgur, Y.I. Alivov, C. Liu, A. Teke, M.A. Reshchikov, S.
Dogan, V. Avrutin, S.-J. Cho, and H. Morkoc, A comprehensive review of ZnO materials and
devices, J. Appl. Phys. 98, 041301-103 (2005).
62. K. Ip, G.T. Thaler, H. Yang, S. Youn Han, Y. Li, D.P. Norton,
S.J. Pearton, S. Jang, and F. Ren, Contacts
to ZnO, J. Cryst. Growth 287, 149-156 (2006).
63. F.A. Trumbore, Solid solubility limit of dopants in germanium, Bell Syst. Tech. J.
39, 205 (1960).
64. C.O. Chui, L. Kulig, J. Moran, W. Tsai, and K.C. Saraswat, Germanium n-type shallow junction activation
dependences, Appl. Phys. Lett. 87, 091909-3
(2005).
65. D. Han, Y. Wang, D. Tian, W. Wang, X. Liu, J. Kang, and R.
Han, Studies of Ti- and Ni-germanide
Schottky contacts on n-Ge(1 0 0) substrates, Microelectron. Eng. 82, 93-98 (2005).
66. S.A. Chambers, Y. Liang, Z. Yu, R. Droopad, and J. Ramdani, Band offset and structure of SrTiO/sub 3/
/Si(001) heterojunctions, J. Vac. Sci. Technol. A 19,
934-9 (2001).
67. V.V. Afanas'ev, M. Houssa, A. Stesmans, and M.M. Heyns, Band alignments in metal–oxide–silicon
structures with atomic-layer deposited Al2O3 and ZrO2, J. Appl. Phys. 91,
3079-3084 (2002).
68. P.W. Peacock and J. Robertson, Bonding, Energies, and Band Offsets of
Si-ZrO2 and HfO2 Gate Oxide Interfaces, Phys. Rev. Lett. 92,
057601 (2004).
69. J.D. Plummer and P.B. Griffin, Material and Process Limits in Silicon VLSI Technology, Proc. IEEE 89,
240 (2001).
70. T. Ushiki, M.-C. Yu, Y. Hirano, H. Shimada,
M. Morita, and T. Ohmi, Reliable
tantalum-gate fully-depleted MOSFET technology featuring low-temperature
processing, IEEE Trans. Elec. Dev. 44, 1467 (1997).
71. Y.-C. Yeo, T.-J. King, and C.M. Hu, Metal-dielectric band alignment and its
implications for metal gate complementary metal-oxide-semiconductor technology,
J. Appl. Phys. 92, 7266-71 (2002).
72. S. Beckx, M. Demand, S. Locorotondo, K. Henson, M. Claes, V.
Paraschiv, D. Shamiryan, P. Jaenen, W. Boullart, and S. Degendt, Implementation of high-k and metal gate
materials for the 45 nm node and beyond: gate patterning development,
Microelectron. Reliab. 45,
1007-1011 (2005).
73. H.N. Alshareef, K. Choi, H.C. Wen, H. Luan, H. Harris, Y.
Senzaki, P. Majhi, B.H. Lee, R. Jammy, S. Aguirre-Tostado, B.E. Gnade, and R.M.
Wallace, Composition dependence of the
work function of Ta[sub 1 - x]Al[sub x]N[sub y] metal gates, Appl. Phys.
Lett. 88, 072108-3 (2006).
74. S. Chatterjee, Y. Kuo, J. Lu, J.-Y. Tewg, and P. Majhi, Electrical reliability aspects of HfO2
high-k gate dielectrics with TaN metal gate electrodes under constant voltage
stress, Microelectron. Reliab. 46,
69-76 (2006).
75. K.W. Hipps, MOLECULAR
ELECTRONICS: It's All About Contacts, Science 294, 536-537 (2001).
76. A. Nitzan and M.A. Ratner, Electron Transport in Molecular Wire
Junctions, Science 300, 1384-1389 (2003).
77. A. Salomon, D. Cahen, S.M. Lindsay, J.
Tomfohr, V.B. Engelkes, and C.D. Frisbie, Comparison
of electronic transport measurements on organic molecules, Adv. Mater. 15,
1 (2003).
78. W.R. Salaneck, M. Lo?gdlund, J.
Birgersson, P. Barta, R. Lazzaroni, and J.L. Bre?das, Electronic and chemical structure of conjugated polymer surfaces and
interfaces: Implications for polymer-based electronic devices, Synth Met 85,
1219-1220 (1997).
79. A.V. Walker, T.B. Tighe, B.C. Haynie, S. Uppili, N. Winograd,
and D.L. Allara, Chemical pathways in the
interactions of reactive metal atoms with organic surfaces: Vapor deposition of
Ca and Ti on a methoxy-terminated alkanethiolate monolayer on Au, J Phys
Chem B 109, 11263-11272 (2005).
80. G.C. Herdt, D.R. Jung, and A.W.
Czanderna, Weak interactions between
deposited metal overlayers and organic functional groups of self-assembled
monolayers, Prog. Surf. Sci. 50, 103-129
(1995).
81. B. de Boer, M.M. Frank, Y.J. Chabal, W. Jiang, E. Garfunkel,
and Z. Bao, Metallic Contact Formation
for Molecular Electronics: Interactions between Vapor-Deposited Metals and
Self-Assembled Monolayers of Conjugated Mono- and Dithiols, Langmuir 20,
1539 -1542 (2004).
82. C.P. Collier, G. Mattersteig, E.W. Wong, Y. Luo, K. Beverly,
J. Sampaio, F.M. Raymo, J.F. Stoddart, and J.R. Heath, A [2]Catenane-Based Solid State Electronically Reconfigurable Switch,
Science 289, 1172-75 (2000).
83. J. Chen, M.A. Reed, A.M. Rawlett, and J.M. Tour, Large on-off ratios and negative
differential resistance in a molecular electronic device, Science 286,
1550-2 (1999).
84. C. Zhou, M.R. Deshpande, M.A. Reed, L. Jones, II, and J.M.
Tour, Nanoscale metal/self-assembled
monolayer/metal heterostructures, Appl. Phys. Lett. 71,
611-13 (1997).
85. R.M. Metzger, T. Xu, and I.R. Peterson, Electrical Rectification by a Monolayer of Hexadecylquinolinium
Tricyanoquinodimethanide Measured between Macroscopic Gold Electrodes, J.
Phys. Chem. B 105, 7280-7290 (2001).
86. M.A. Reed, C. Zhou, C.J. Muller, T.P. Burgin, and J.M. Tour, Conductance of a molecular junction,
Science 278, 252-254 (1997).
87. J. Reichert, R. Ochs, D. Beckmann, H.B.
Weber, M. Mayor, and H. von Lohneysen, Driving
current through single organic molecules, Phys. Rev. Lett. 88,
art. no.-176804 (2002).
88. C. Zhou, C.J. Muller, M.R. Deshpande, J.W. Sleight, and M.A.
Reed, Microfabrication of a Mechanically
Controllable Break Junction in Silicon, Appl. Phys. Lett. 67, 1160-1162 (1995).
89. H. Park, A.K.L. Lim, A.P. Alivisatos, J. Park, and P.L.
McEuen, Fabrication of metallic
electrodes with nanometer separation by electromigration, Appl. Phys. Lett.
75, 301-303 (1999).
90. E.A. Speets, B.J. Ravoo, F.J.G. Roesthuis, F. Vroegindeweij,
D.H.A. Blank, and D.N. Reinhoudt, Fabrication
of Arrays of Gold Islands on Self-Assembled Monolayers Using Pulsed Laser
Deposition through Nanosieves, Nano Lett. ASAP Article
10.1021 (2004).
91. M. Dorogi, J. Gomez, R. Osifchin, R.P. Andres, and R.
Reifenberger, Room-temperature Coulomb
blockade from a self-assembled molecular nanostructure, Phys. Rev. B 52,
9071–9077 (1995).
92. X.D. Cui, A. Primak, X. Zarate, J. Tomfohr, O. F. Sankey, A.
L. Moore, T. A. Moore, D. Gust, G. Harris, and S. M. Lindsay, Reproducible Measurement of Single-Molecule
Conductivity, Science 294, 571 (2001).
93. T. Ohgi, H.-Y. Sheng, and H. Nejoh, Au particle deposition onto self-assembled
monolayers of thiol and dithiol molecules, Appl. Surf. Sci.
130-132, 919-924 (1998).
94. B. Wang, X. Xiao, and P. Sheng, Growth and characterization of Au clusters on alkanethiol
self-assembled monolayers, J. Vac. Sci. Technol. 18, 2351-2358
(2000).
95. D.I. Gittins, D. Bethell, D.J. Schiffrin,
and R.J. Nichols, A nanometre-scale
electronic switch consisting of a metal cluster and redox-addressable groups,
Nature 408, 67-69 (2000).
96. I. Amlani, A.M. Rawlett, L.A. Nagahara, and R.K. Tsui, An approach to transport measurements of
electronic molecules, Appl. Phys. Lett. 80, 2761-3
(2002).
97. H.O. Finklea and D.D. Hanshew, Electron-transfer kinetics in organized thiol monolayers with attached
pentaammine(pyridine)ruthenium redox centers, J. Am. Chem. Soc. 114,
3173 - 3181 (1992).
98. J.F. Smalley, S.W. Feldberg, C.E.D.
Chidsey, M.R. Linford, M.D. Newton, and Y.-P. Liu, The Kinetics of Electron Transfer Through Ferrocene-Terminated
Alkanethiol Monolayers on Gold, J. Phys. Chem. 99, 13141 - 13149
(1995).
99. S.B. Sachs, S.P. Dudek, R.P. Hsung, L.R. Sita, J.F. Smalley,
M.D. Newton, S.W. Feldberg, and C.E.D. Chidsey, Rates of Interfacial Electron Transfer through pi-Conjugated Spacers,
J. Am. Chem. Soc. 119, 10563 -10564 (1997).
100. K. Weber, L. Hockett, and S. Creager, Long-Range Electronic Coupling between Ferrocene and Gold in
Alkanethiolate-based Monolayers on Electrodes, J. Phys. Chem. B 101,
8286 -8291 (1997).
101. S. Creager, C.J. Yu, C. Bamdad, S. O'Connor, T. MacLean, E.
Lam, Y. Chong, G.T. Olsen, J. Luo, M. Gozin, and J.F. Kayyem, Electron Transfer at Electrodes through
Conjugated "Molecular Wire" Bridges, J. Am. Chem. Soc. 121,
1059 -1064 (1999).
102. H. Hagenström, M.J. Esplandiú, and D.M. Kolb, Functionalized Self-Assembled Alkanethiol
Monolayers on Au(111) Electrodes: 2. Silver Electrodeposition,
Langmuir 17, 839 -848 (2001).
103. A. Vilan and D. Cahen, Soft
Contact Deposition onto Molecularly Modified GaAs. Thin Metal Film Flotation:
Principles and Electrical Effects, Adv. Funct. Mater.
12, 795-807 (2002).
104. R.P. Andres, T. Bein, M. Dorogi, S. Feng, J. I. Henderson, C.
P. Kubiak, W. Mahoney, R. G. Osifchin, and R. Reifenberger, ``Coulomb Staircase'' at Room Temperature in
a Self-Assembled Molecular Nanostructure, Science 272, 1323-1325
(1996).
105. H. Dai, E.W. Wong, and C.M. Lieber, Probing Electrical Transport in Nanomaterials: Conductivity of
Individual Carbon Nanotubes, Science 272, 523-526 (1996).
106. F.F. Fan, J. Yang, S.M. Dirk, D.W. Price, D. Kosynkin, J.M.
Tour, and A.J. Bard, Determination of the
Molecular Electrical Properties of Self-Assembled Monolayers of Compounds of
Interest in Molecular Electronics, J. Am. Chem. Soc. 123, 2454
(2001).
107. X.D. Cui, X. Zarate, J. Tomfohr, O.F.
Sankey, A. Primak, A.L. Moore, T.A. Moore, D. Gust, G. Harris, and S.M.
Lindsay, Making electrical contacts to
molecular monolayers, Nanotechnol. 13, 5-14 (2002).
108. D.J. Wold, R. Haag, M.A. Rampi, and C.D. Frisbie, Distance dependence of electron tunneling
through self- assembled monolayers measured by conducting probe atomic force
microscopy: Unsaturated versus saturated molecular junctions, J. Phys.
Chem. B 106, 2813-2816 (2002).
109. M.T. Cygan, T.D. Dunbar, J.J. Arnold, L.A. Bumm, N.F. Shedlock,
T.P. Burgin, I. L. Jones, D.L. Allara, J.M. Tour, and P.S. Weiss, Insertion, Conductivity, and Structures of
Conjugated Organic Oligomers in Self-Assembled Alkanethiol Monolayers on
Au{111}, J. Am. Chem. Soc. 120, 2721 -2732 (1998).
110. S. Datta, W. Tian, S. Hong, R. Reifenberger, J.I. Henderson,
and C.P. Kubiak, Current-Voltage
Characteristics of Self-Assembled Monolayers by Scanning Tunneling Microscopy,
Phys. Rev. Lett. 79, 2530 (1997).
111. A. Dhirani, P.-H. Lin, P. Guyot-Sionnest,
R.W. Zehner, and L.R. Sita, Self-assembled
molecular rectifiers, J. Chem. Phys. 106, 5249-5253 (1997).
112. V.J. Langlais, R.R. Schlittler, H. Tang, A. Gourdon, C.
Joachim, and J.K. Gimzewski, Spatially
Resolved Tunneling along a Molecular Wire, Phys. Rev. Lett. 83, 2809–2812 (1999).
113. S.F. Alvarado, L. Rossi, P. Muller, and W. Riess, Charge-carrier injection into CuPc thin
films: a scanning tunneling microscopy study, Synth. Metals
122, 73-77 (2001).
114. G.V. Nazin, X.H. Qiu, and W. Ho, Visualization and Spectroscopy of a Metal-Molecule-Metal Bridge,
Science 302, 77-81 (2003).
115. J.G. Kushmerick, D.B. Holt, S.K. Pollack, M.A. Ratner, J.C.
Yang, T.L. Schull, J. Naciri, M.H. Moore, and R. Shashidhar, Effect of Bond-Length Alternation in
Molecular Wires, J. Am. Chem. Soc. 124, 10654-10655 (2002).
116. J.G. Kushmerick, J. Naciri, J. C. Yang, and R. Shashidhar, Conductance Scaling of Molecular Wires in
Parallel, Nano Lett. 3, 897-900 (2003).
117. K. Slowinski, R.V. Chamberlain, C.J.
Miller, and M. Majda, Through-Bond and
Chain-to-Chain Coupling. Two Pathways in Electron
Tunneling through Liquid Alkanethiol Monolayers on Mercury Electrodes, J. Am. Chem. Soc. 119,
11910 -11919 (1997).
118. S. Frank, P. Poncharal, Z.L. Wang, and W.A.d. Heer, Carbon Nanotube Quantum Resistors,
Science 280, 1744-1746 (1998).
119. R.E. Holmlin, R. Haag, M.L. Chabinyc, R.F. Ismagilov, A.E.
Cohen, A. Terfort, M.A. Rampi, and G.M. Whitesides, Electron Transport through Thin Organic Films in Metal-Insulator-Metal
Junctions Based on Self-Assembled Monolayers, J. Am. Chem. Soc. 123,
5075 (2001).
120. M.A. Rampi and G.M. Whitesides, A versatile experimental approach for understanding electron transport
through organic materials, Chem. Phys. 281, 373-91 (2002).
121. Y. Xia and G.M. Whitesides, Soft
Lithography, Angew. Chem. Int. Ed. 37, 550-575
(1998).
122. P.M.S. John and H.G. Craighead, Microcontact printing and pattern transfer using trichlorosilanes on
oxide substrates, Appl. Phys. Lett. 68, 1022-1024
(1996).
123. L. Libioulle, A. Bietsch, H. Schmid, B. Michel, and E.
Delamarche, Contact-Inking Stamps for
Microcontact Printing of Alkanethiols on Gold, Langmuir 15, 300 -304
(1999).
124. M. Geissler, A. Bernard, A. Bietsch, H. Schmid, B. Michel, and
E. Delamarche, Microcontact-Printing
Chemical Patterns with Flat Stamps, J. Am. Chem. Soc. 122, 6303
-6304 (2000).
125. H.X. He, Q.G. Li, Z.Y. Zhou, H. Zhang, S.F.Y. Li, and Z.F. Liu,
Fabrication of Microelectrode Arrays
Using Microcontact Printing, Langmuir 16, 9683 -9686 (2000).
126. T.L. Breen, P.M. Fryer, R.W. Nunes, and
M.E. Rothwell, Patterning Indium Tin
Oxide and Indium Zinc Oxide Using Microcontact Printing and Wet Etching,
Langmuir 18, 194 -197 (2002).
127. Y.-L. Loo, R.L. Willett, K.W. Baldwin, and J.A. Rogers, Additive, nanoscale patterning of metal
films with a stamp and a surface chemistry mediated transfer process:
Applications in plastic electronics, Appl. Phys. Lett. 81,
562-564 (2002).
128. Y.-L. Loo, D.V. Lang, J.A. Rogers, and J.W.P. Hsu, Electrical contacts to molecular layers by
nanotransfer printing, Nano Lett. 3, 913-917
(2003).
129. Y.-L. Loo, R.L. Willett, K.W. Baldwin, and J.A. Rogers, Interfacial Chemistries for Nanoscale
Transfer Printing, J. Am. Chem. Soc. 124, 7654 (2002).
130. H. Haick, M. Ambrico, J. Ghabboun, T.
Ligonzo, and D. Cahen, Contacting organic
molecules by metal evaporation, Phys. Chem. Chem. Phys. 6, 4538-4541
(2004).
131. S.E. Ogun and R.T. Tung, Combined UHV and Liquid Phase (CULP)
Processing of Self-Assembled Nanostructures, 879E, Z10.36.1 (2005).
132. E. Kaxiras, Semiconductor-surface
restoration by valence-mending adsorbates: Application to Si(100):S
and Si(100):Se, Phys. Rev. B J1 -
PRB 43, 6824 LP - 6827 (1991).
133. J.P. Lacharme, N. Benazzi, and C.A. Sebenne, Compositional and electronic properties of Si(001)2 x 1 upon diatomic sulfur interaction, Surf. Sci. 433-435, 415-419 (1999).
134. R. Saiz-Pardo, R. Perez, F.J. Garcia-Vidal, R. Whittle, and F.
Flores, Systematic theoretical studies of
the Schottky barrier control by passivating atomic intralayers, Surf. Sci. 426, 26-37 (1999).
135. M. Bruening, E. Moons, D. Cahen, and A. Shanzer, Controlling the Work Function of CdSe by
Chemisorption of Benzoic Acid Derivatives and Chemical Etching, J. Phys.
Chem. 99, 8368 - 8373 (1995).
136. S.D. Evans, E. Urankar, A. Ulman, and N. Ferris, Self-assembled monolayers of alkanethiols
containing a polar aromatic group: effects of the dipole position on molecular
packing, orientation, and surface wetting properties, J. Am. Chem. Soc. 113,
4121-4131 (1991).
137. G. Ashkenasy, D. Cahen, R. Cohen, A. Shanzer, and A. Vilan, Molecular engineering of semiconductor
surfaces and devices, Accounts Chem. Res. 35, 121-128 (2002).
138. J. Krüger, U. Bach, and M. Grätzel, Modification of TiO2 Heterojunctions with Benzoic Acid Derivatives in
Hybrid Molecular Solid-State Devices, Adv. Mater. 12,
447-451 (2000).
139. F. Nüesch, F. Rotzinger, L. Si-Ahmed, and L. Zuppiroli, Chemical potential shifts at organic device
electrodes induced by grafted monolayers, Chem. Phys. Lett. 288, 861-867 (1998).
140. D.M. Taylor and G.F. Bayes, Calculating
the surface potential of unionized monolayers, Phys. Rev. E 49, 1439
- 1449 (1994).
141. C. Ganzorig, K.-J. Kwak, K. Yagi, and M.
Fujihira, Fine tuning work function of
indium tin oxide by surface molecular design: Enhanced hole
injection in organic electroluminescent devices, Appl. Phys. Lett. 79, 272-274 (2001).
142. M.F. Iozzi and M. Cossi, Ab
initio theoretical study of substituted dicarboxylic acids adsorbed on GaAs
surfaces: Correlation between microscopic properties and observed electrical
behavior, J. Phys. Chem. B 109, 15383-15390 (2005).
143. S. Bastide, R. Butruille, D. Cahen, A.
Dutta, J. Libman, A. Shanzer, L.M. Sun, and A. Vilan, Controlling the work function of GaAs by chemisorption of benzoic acid
derivatives, J. Phys. Chem. B 101, 2678-2684 (1997).
144. M. Carrara, F. Nüesch, and L. Zuppiroli, Carboxylic acid anchoring groups for the
construction of self-assembled monolayers on organic device electrodes,
Synth. Metals 121, 1633-1634 (2001).
145. R. Cohen, L. Kronik, A. Shanzer, D. Cahen, A. Liu, Y.
Rosenwaks, J.K. Lorenz, and A.B. Ellis, Molecular
Control over Semiconductor Surface Electronic Properties: Dicarboxylic Acids on
CdTe, CdSe, GaAs, and InP, J. Am. Chem. Soc. 121, 10545 -10553
(1999).
146. A. Vilan, J. Ghabboun, and D. Cahen, Molecule-Metal Polarization at Rectifying
GaAs Interfaces, J. Phys. Chem. B 107, 6360 -6376 (2003).
147. H. Haick, J. Ghabboun, O. Niitsoo, H. Cohen, D. Cahen, A.
Vilan, J. Hwang, A. Wan, F. Amy, and A. Kahn, Effect of molecular binding to a semiconductor on metal/molecule/
semiconductor junction behavior, J. Phys. Chem. B 109, 9622-9630
(2005).
148. A. Salomon, D. Berkovich, and D. Cahen, Molecular modification of an ionic semiconductor-metal interface:
ZnO/molecule/Au diodes, Appl Phys Lett 82, 1051-1053 (2003).
149. H. Haick, J. Ghabboun, and D. Cahen, Pd versus Au as evaporated metal contacts to
molecules, Appl. Phys. Lett. 86, (2005).
150. H. Haick, M. Ambrico, T. Ligonzo, and D. Cahen, Discontinuous molecular films can control
metal/semiconductor junctions, Adv. Mater. 16,
2145-2151 (2004).
151. H. Haick, P.T. Hurley, A.I. Hochbaum, P. Yang, and N.S. Lewis, Electrical characteristics and chemical
stability of non-oxidized, methyl-terminated silicon nanowires, J. Am.
Chem. Soc. 128, 8990-8991 (2006).
152. H. Haick, J.P. Pelz, T. Ligonzo, M. Ambrico, D. Cahen, W. Cai, C. Marginean, C. Tivarus, and R.T. Tung, Controlling Au/n-GaAs Junctions by Partial
Molecular Monolayers, phys. stat. sol. (a) in press (2006).
153. R.T. Tung, A.F.J. Levi, J.P. Sullivan, and F. Schrey, Schottky-barrier inhomogeneity at epitaxial
NiSi/sub 2/ interfaces on Si(100), Phys. Rev. Lett. 66,
72-5 (1991).
154. R.T. Tung, Electron
transport at metal-semiconductor interfaces: General theory, Phys. Rev. B 45,
13509-23 (1992).
155. A. Olbrich, J. Vancea, F. Kreupl, and H. Hoffmann, Potential pinch-off effect in inhomogeneous
Au/Co/GaAs/sub 67/P/sub 33/(100)-Schottky contacts,
Appl. Phys. Lett. 70, 2559-61 (1997).
156. K.C. Pandey, New pi -Bonded Chain Model for Si(111)-(2 x1)
Surface, Phys. Rev. Lett. 47, 1913 - 1917 (1981).
157. S.C. Erwin and H.H. Weitering, Theory of the "honeycomb chain-channel" reconstruction of M/Si(111)-(3 × 1), Phys Rev Lett 81, 2296-2299
(1998).
158. D. Jeon, T. Hashizume, T. Sakurai, and R.F. Willis, Structural and electronic properties of
ordered single and multiple layers of Na on the Si (111) surface, Phys Rev
Lett 69, 1419-1422 (1992).
159. C. Bromberger, J.N. Crain, K.N. Altmann, J.J. Paggel, F.J.
Himpsel, and D. Fick, Electronic
structure of the single-domain Si(111)-(3 × 1)-Li surface, Phys. Rev. B
Condens. Matter Mater. Phys. 68, 753201-753207 (2003).
160. M. Gurnett, J.B. Gustafsson, L.J. Holleboom, K.O. Magnusson,
S.M. Widstrand, L.S.O. Johansson, M.K.-J. Johansson, and S.M. Gray, Core-level spectroscopy study of the Li Si
(111) -3×1, Na Si (111) -3×1, and K Si (111) -3×1 surfaces, Phys. Rev. B 71,
1-9 (2005).
161. A.A. Baski, S.C. Erwin, M.S. Turner, K.M. Jones, J.W.
Dickinson, and J.A. Carlisle, Morphology
and electronic structure of the Ca/Si(1 1 1) system, Surf Sci 476,
22-34 (2001).
162. G. Lee, S. Hong, H. Kim, D. Shin, J.-Y. Koo,
H.-I. Lee, and D.W. Moon, Structure
of the Ba-induced Si(111)-(3 X 2) reconstruction,
Phys Rev Lett 87, (2001).
163. K. Sakamoto, W. Takeyama, H.M. Zhang, and R.I.G. Uhrberg, Structural investigation of Ca/Si(111) surfaces, Phys. Rev. B Condens. Matter Mater. Phys. 66, 1653191-1653198 (2002).
164. P. Hutchison, M.M.R. Evans, and J. Nogami, Initial stages of Mg growth on the Si(001) surface studied by STM,
Surf. Sci. 411, 99-110 (1998).
165. J.S. Kim, K.-W. Ihm, C.-C. Hwang, H.S. Kim, Y.-K. Kim, C.-Y. Park, J.-H. Boo, and S.B. Lee, LEED studies of the adsorption of Mg and Ba on a single domain
Si(001)2×1 surface, J. Korean Phys. Soc. 35, (1999).
166. O. Kubo, A.A. Saranin, A.V. Zotov, T.
Harada, T. Kobayashi, N. Yamaoka, J.-T. Ryu, M. Katayama, and K. Oura, Mg/Si(100) reconstructions studied by
scanning tunneling microscopy, Jpn J Appl Phys Part 1 Regul Pap Short Note
Rev Pap 39, 3740-3743 (2000).
167. R. Shaltaf, E. Mete, and S. Ellialtiog?lu,
Mg adsorption on Si(001) surface from
first principles, Phys. Rev. B 69, 1254171-1254177 (2004).
168. M.Y. Lai and Y.L. Wang, Gallium-induced
nanostructures on Si(111): From magic clusters to
incommensurate structures, Phys. Rev. B 60, 1764-1770 (1999).
169. S. Gangopadhyay, T. Schmidt, and J. Falta, Influence of substrate domain boundaries on surface reconstructions of
Ga/Si(1 1 1), Surf. Sci. 552,
63-69 (2004).
170. Y. Horio, Structure
analysis of Si(111)(rt3×rt3)-Al by energy-filtered
RHEED, Surf. Rev. Lett. 4, 977-983 (1997).
171. V.G. Kotlyar, A.A. Saranin, A.V. Zotov, T.V. Kasyanova, E.N.
Chukurov, I.V. Pisarenko, and V.G. Lifshits, Atomic structure of the Al/Si(111) phases
studied using STM and total-energy calculations, e-J. Surf.
Sci. Nanotechnol. 3, 55-62 (2005).
172. T. Hanada, H. Daimon, and S. Ino, Rocking-curve analysis of reflection high-energy electron diffraction
from the Si(111)-( sqrt 3 x sqrt
3 )R30°-Al, -Ga, and -In surfaces, Phys. Rev. B 51,
13320 - 13325 (1995).
173. M.A. Olmstead, R.D. Bringans, R.I.G. Uhrberg, and R.Z. Bachrach,
Arsenic overlayer on Si(111): Removal of
surface reconstruction, Phys. Rev. B 34, 6041 - 6044 (1986).
174. R.L. Headrick and W.R. Graham, Geometric structure of the Si(111): As-1 x 1
surface, Phys. Rev. B 37, 1051 - 1054 (1988).
175. J.E. Bonnet, M.G. Martin, J. Avila, L. Roca, and M.C. Asensio, First stage of the formation of silver thin
films on the As-passivated Si(111)-(1 x 1) surface,
Surf. Rev. Lett. 7, 167-173 (2000).
176. V. Pantin, J. Avila, M.E. Davila, J.E. Bonnet, and M.C.
Asensio, Photoelectron diffraction study
of Ag growth mediated by an arsenic layer on Si(1 1 1)1 × 1, J Electron
Spectrosc Relat Phenom 137-140, 155-160 (2004).
177. M. Tao, D. Udeshi, S. Agarwal, E. Maldonado, and W.P. Kirk, Negative Schottky barrier between titanium
and n-type Si(0 0 1) for low-resistance ohmic contacts, Solid-St. Electron.
48, 335-338 (2004).
178. A.C. Papageorgopoulos and M. Kamaratos, Adsorption and desorption of Se on Si(100)2×1:
Surface restoration, Surf Sci 466, 173-182 (2000).
179. A. Papageorgopoulos, A. Corner, M. Kamaratos, and C.A.
Papageorgopoulos, Adsorption of elemental
S on Si(100)2x1: Surface restoration, Phys. Rev. B
55, 4435 - 4441 (1997).
180. P.A. Coon, P. Gupta, M.L. Wise, and S.M. George, Adsorption and desorption kinetics for SiH[sub 2]Cl[sub 2] on Si(111) 7 x 7, J. Vac. Sci.
Technol. A 10, 324-333 (1992).
181. Q. Gao, C.C. Cheng, P.J. Chen, W.J. Choyke, and J. Yates, J.
T., Chlorine bonding sites and bonding
configurations on Si(100)--(2 x 1), J. Chem. Phys. 98, 8308-8323
(1993).
182. X.-Y. Zhu, V. Boiadjiev, J.A. Mulder, R.P. Hsung, and R.C.
Major, Molecular assemblies on silicon
surfaces via Si-O linkages, Langmuir 16, 6766-6772 (2000).
183. A. Bansal, X. Li, S.I. Yi, W.H. Weinberg, and N.S. Lewis, Spectroscopic studies of the modification of
crystalline si(111) surfaces with covalently-attached alkyl chains using a
chlorination/alkylation method, J Phys Chem B 105, 10266-10277
(2001).
184. Z. Li, T.I. Kamins, X. Li, and R.S. Williams, Chlorination of Si surfaces with gaseous hydrogen
chloride at elevated temperatures, Surf Sci 554, (2004).
185. S. Rivillon, F. Amy, Y.J. Chabal, and M.M. Frank, Gas phase chlorination of
hydrogen-passivated silicon surfaces, Appl Phys Lett 85, 2583-2585
(2004).
186. B.J. Eves and G.P. Lopinski, Formation and reactivity of high quality halogen terminated Si(1 1 1) surfaces, Surf Sci 579, (2005).
187. J.M. Buriak, Organometallic Chemistry on Silicon and Germanium Surfaces, Chem.
Rev. 102, 1271 -1308 (2002).
188. L.J. Webb and N.S. Lewis, Comparison
of the electrical properties and chemical stability of crystalline silicon(111) surfaces alkylated using Grignard reagents or
Olefins with Lewis acid catalysts, J. Phys. Chem. B 107, 5404-5412
(2003).
189. W. Swiech, E. Bauer, and M. Mundschau, Low-energy electron microscopy study of the system Si(111)-Au,
Surf Sci 253, 283-296 (1991).
190. R. Plass and L.D. Marks, Submonolayer
Au on Si(111) phase diagram, Surf Sci 380,
497-506 (1997).
191. R. Flammini, F. Wiame, R. Belkhou, A. Taleb-Ibrahimi, L.
Gregoratti, A. Barinov, M. Marsi, and M. Kiskinova, Effects of annealing on the structure of the Au/Si(1 1 1)-H interface,
Surf Sci 564, 121-130 (2004).
192. A. Rota, A. Martinez-Gil, G. Agnus, E. Moyen, T. Maroutian, B.
Bartenlian, R. Megy, M. Hanbucken, and P. Beauvillain, Au Island growth on a Si(1 1 1) vicinal surface, Surf Sci 600,
1207-1212 (2006).
193. C. Grupp and A. Taleb-Ibrahimi, Au/H:Si(111)-(1×1) interface versus
Au/Si(111)-(7×7), Phys. Rev. B 57, 6258-6261 (1998).
194. R. Srinivasan and I.I. Suni, Electroless deposition of Au onto Si(111)
studied by surface second harmonic generation, Surf Sci 408, (1998).
195. C. Rossiter and I.I. Suni, Atomic
force microscopy of Au deposition from aqueous HF onto Si(111),
Surf Sci 430, (1999).
196. B.L. Halpern and J.J. Schmitt, Multiple jets and moving substrates: Jet Vapor Deposition of
multicomponent thin films, J. Vac. Sci. Technol. A 12,
1623-1627 (1994).
197. D.D. Hass, J.F. Groves, and H.N.G. Wadley, Reactive vapor deposition of metal oxide coatings, Surf. Coat. Technol. 146-147, 85-93
(2001).
198. R.T. Tung, Epitaxial
CoSi2 and NiSi2 Thin-Films, Mater. Chem. Phys. 32,
107-133 (1992).
199. J.M. Shannon, Control of
Schottky barrier height using highly doped surface layers, Solid-St.
Electron. 19, 537-43 (1976).
200. S.J. Eglash, P. Shihong, M. Dang, W.E. Spicer, and D.M.
Collins, Modified Schottky barrier
heights by interfacial doped layers: MBE Al on GaAs, Jpn. J. Appl. Phys.
Suppl. 431-5 (1982).
201. J.P. Sullivan, R.T. Tung, D.J. Eaglesham, F. Schrey, and W.R.
Graham, Giant variation in Schottky
barrier height observed in the Co/Si system, J. Vac. Sci. Technol. B 11,
1564-70 (1993).
202. R.T. Tung and F. Schrey, Topography
of the Si(111) surface during silicon molecular beam
epitaxy,, Phys. Rev. Lett. 63, 1277 (1989).
203. R.T. Tung, F. Schrey, and D. J. Eaglesham, A transmission electron microscopy study of the topography of clean
Si(111) surfaces,, J. Vac. Sci. Technol. B 8, 237 (1990).
204. R.T. Tung, Oxide mediated
epitaxy of CoSi2 on silicon, Appl. Phys. Lett. 68,
3461-3463 (1996).
205. R.T. Tung, K. Fujii, K. Kikuta, S. Chikaki, and T. Kikkawa, Growth of TiSi2 from codeposited TiSix
layers and interfacial layers, Appl. Phys. Lett. 70,
2386-2388 (1997).
206. S. Ohmi and R.T. Tung, Effect
of ultrathin Mo and MoSix layer on Ti silicide reaction, J. Appl. Phys. 86,
3655-3660 (1999).