Experimentally observed SF's [from M.
Schluter, Phys. Rev. B 17, 5044 (1978)] are plotted
against the inverse of the dielectric constant of the semiconductor,
as suggested by the division-by-epsilon model of Schottky barrier height formation.
The solid line and the dashed lines correspond to
eit = einf and
eit = 2 einf,
respectively.
Note that the agreement between theory and experiment is poor for either case.
