a. Initial Research Plan

     After the completion of Phase 1, we plan to use a familiar system, Schottky barrier height on Si(111), to make the initial assessment of the instrument. Previous work with the direct deposition of metal shows strong Fermi level pinning on either the atomically clean 7x7 or the hydrogen terminated 1x1 surface. Measurement of the barrier height of stamped junctions with various metals is expected to reveal a very different behavior. Taking advantage of the Si-MBE facility still available during Phase 2, we plan to extend the SBH study to Si(100) and epitaxially grown SiGe(100). The SBHs of GaAs and InP are also studied using the stamping method. These are some of the most strongly pinned semiconductors and, therefore, are expected to show the largest effect from a change in their interface fabrication. Collaborative work with Prof. Garfunkel of Rutgers University on aluminum oxide is also planned for this period. For the evaluation of the capabilities added during Phase 2, we plan to study the effect of SAM on the SBH to GaN and also jointly with Prof. Kahn of Princeton University on his metal-molecule junctions.

b. Long Range Plan

     The proposed chamber is a versatile tool to study the fundamental issues of dipole formation at virtually all kinds of solid surfaces. There are many technologically important material systems, which can benefit greatly from an investigation with the proposed instrument. We plan to submit proposals to major funding agencies to investigate the molecular alignment at metal-organic interface and the Schottky barrier height on wide-bandgap semiconductors, the latter possibly with the inclusion of an SAM dipole layer. We also plan to publicize the special features of the instrument to encourage collaboration with researchers in various fields.